Manipulation of the Spin Memory of Electrons inn-GaAs-Reference-Cited by-同舟云学术

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Manipulation of the Spin Memory of Electrons inn-GaAs

Published:2002-06-05 Issue:25 Volume:88 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Dzhioev R. I.,Korenev V. L.,Merkulov I. A.,Zakharchenya B. P.,Gammon D.,Efros Al. L.,Katzer D. S.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.88.256801/fulltext

Reference17 articles.

1. Spin diffusion of optically oriented electrons and photon entrainment in n-gallium arsenide

2. Resonant Spin Amplification inn-Type GaAs

3. Long electron spin memory times in gallium arsenide

4. Magnetoelectronics

5. Coupled quantum dots as quantum gates

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