Effects of Hydrogen on the Electronic Properties of Dilute GaAsN Alloys
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.89.086403/fulltext
Reference31 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Annealing behavior of p-type Ga0.892In0.108NxAs1−x (0⩽X⩽0.024) grown by gas-source molecular beam epitaxy
3. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
4. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
5. 1-eV solar cells with GaInNAs active layer
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