Erratum: Realization of Spin Gapless Semiconductors: The Heusler Compound Mn2CoAl [Phys. Rev. Lett. 110 , 100401 (2013)]
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.122.059901/fulltext
Reference2 articles.
1. Half-Metallic Ferromagnetism with Unexpectedly Small Spin Splitting in the Heusler CompoundCo2FeSi
2. Experimental validation of the anomalies in the electron density of states in semiconductor iron-vanadium-aluminum alloys
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1. Heusler alloy Mn2CoAl: structural, magnetic and electronic properties;Journal of Physics D: Applied Physics;2024-09-12
2. Crystal structure, magnetic and electrical transport properties of titanium-doped half-Heusler alloys Ni1−xTixMnSb;Modern Physics Letters B;2024-05-18
3. Discovery of new potential magnetic semiconductors in quaternary Heusler compounds by addition of lanthanides;Chinese Physics B;2023-12-01
4. Vanishing of the anomalous Hall effect and enhanced carrier mobility in the spin-gapless ferromagnetic Mn2CoGa1−xAlx alloys;Journal of Applied Physics;2023-11-02
5. Magnetic properties of V2MnGa, V2MnAl, V2FeGa and V2FeAl;Journal of Magnetism and Magnetic Materials;2023-11
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