Laser Annealing of Damaged Silicon Covered with a Metal Film: Test for Epitaxial Growth from the Melt
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.46.156/fulltext
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1. Arsenic diffusion in silicon melted by high‐power nanosecond laser pulsing
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4. A computer simulation of laser annealing silicon at 1.06 μm
5. Calculation of the dynamics of surface melting during laser annealing
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