Grain Boundaries in Gallium Arsenide Nanocrystals Under Pressure: A Parallel Molecular-Dynamics Study-Reference-Cited by-同舟云学术

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Grain Boundaries in Gallium Arsenide Nanocrystals Under Pressure: A Parallel Molecular-Dynamics Study

Published:2001-01-01 Issue:1 Volume:86 Page:55-58
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Kodiyalam Sanjay,Kalia Rajiv K.,Kikuchi Hideaki,Nakano Aiichiro,Shimojo Fuyuki,Vashishta Priya

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.86.55/fulltext

Reference23 articles.

1. Structural phase transitions in GaAs to 108 GPa

2. High-pressure phase transition and phase diagram of gallium arsenide

3. Structural properties of III-V zinc-blende semiconductors under pressure

4. High-pressure phases of III-V zinc-blende semiconductors

5. Density-functional calculation of static and dynamic properties of GaAs

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