Interstitial precursor to silicide formation on Si(111)-(7×7)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.73.452/fulltext
Reference24 articles.
1. Ultrathin film growth of silicides studied using microprobe reflection high‐energy electron diffraction and Auger
2. NiSi mixing: A new model for low temperature silicide formation
3. Stranski-Krastanov Growth of Ni on Si(111) at Room Temperature
4. Reinvestigation of first phase nucleation in planar metal‐Si reaction couples
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4. Adsorption and spin-related properties of multi-Co atoms assembled in the half unit cells of Si(111)-(7 × 7);New Journal of Physics;2017-02-23
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