Controlled Aggregation of Magnetic Ions in a Semiconductor: An Experimental Demonstration-Reference-Cited by-同舟云学术

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Controlled Aggregation of Magnetic Ions in a Semiconductor: An Experimental Demonstration

Published:2008-09-25 Issue:13 Volume:101 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Bonanni A.,Navarro-Quezada A.,Li Tian,Wegscheider M.,Matěj Z.,Holý V.,Lechner R. T.,Bauer G.,Rovezzi M.,D’Acapito F.,Kiecana M.,Sawicki M.,Dietl T.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.101.135502/fulltext

Reference23 articles.

1. Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths

2. Theory of ferromagnetic semiconductors

3. High-Curie-temperature ferromagnetism in self-organized Ge1−xMnx nanocolumns

4. Origin and control of ferromagnetism in dilute magnetic semiconductors and oxides (invited)

5. Origin and control of high-temperature ferromagnetism in semiconductors

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