Spin Reorientation Transition in Single-Domain(Ga,Mn)As-Reference-Cited by-同舟云学术

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Spin Reorientation Transition in Single-Domain(Ga,Mn)As

Published:2005-11-16 Issue:21 Volume:95 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Wang K.-Y.,Sawicki M.,Edmonds K. W.,Campion R. P.,Maat S.,Foxon C. T.,Gallagher B. L.,Dietl T.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.95.217204/fulltext

Reference23 articles.

1. Ferromagnetic semiconductor heterostructures

2. Effect of the location of Mn sites in ferromagneticGa1−xMnxAson its Curie temperature

3. Influence of the Mn interstitial on the magnetic and transport properties of (Ga,Mn)As

4. Ferromagnetic moment and antiferromagnetic coupling in (Ga,Mn)As thin films

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3. Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers;2023-07-27

4. Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistance;Materials;2023-01-13

5. Magnetic Anisotropy of Permalloy Films Prepared by Oblique Angle Magnetron Sputtering;Physics of Metals and Metallography;2022-11

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