Schottky-barrier formation at low metal coverages: A consistent molecular-orbital calculation for K on GaAs(110)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.63.2500/fulltext
Reference21 articles.
1. Theory of Surface States
2. The metal-semiconductor interface: Si (111) and zincblende (110) junctions
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4. Investigation of the mechanism for Schottky barrier formation by group III metals on GaAs(110)
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