Chemical-Potential-Dependent Gap Opening at the Dirac Surface States ofBi2Se3Induced by Aggregated Substitutional Cr Atoms-Reference-Cited by-同舟云学术

Chemical-Potential-Dependent Gap Opening at the Dirac Surface States ofBi2Se3Induced by Aggregated Substitutional Cr Atoms

Published:2014-02-06 Issue:5 Volume:112 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Chang Cui-Zu,Tang Peizhe,Wang Yi-Lin,Feng Xiao,Li Kang,Zhang Zuocheng,Wang Yayu,Wang Li-Li,Chen Xi,Liu Chaoxing,Duan Wenhui,He Ke,Ma Xu-Cun,Xue Qi-Kun

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.112.056801/fulltext

Reference39 articles.

1. Colloquium: Topological insulators

2. Topological insulators and superconductors

3. Topological Insulators in Three Dimensions

4. A topological Dirac insulator in a quantum spin Hall phase

5. Topological field theory of time-reversal invariant insulators

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