Filling Fraction Limit for Intrinsic Voids in Crystals: Doping in Skutterudites
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.95.185503/fulltext
Reference29 articles.
1. Recent developments in thermoelectric materials
2. Microscopic Origin of the Phenomenological Equilibrium “Doping Limit Rule” inn-Type III-V Semiconductors
3. Progress in SiAlON ceramics
4. Cerium filling and doping of cobalt triantimonide
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