Preservation of a 7×7 periodicity at a buried amorphous Si/Si(111) interface
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.56.355/fulltext
Reference22 articles.
1. Structure of Si(111)-(7×7)H
2. Hydrogen adsorption on Si(111)–(7×7)
3. Interplay of the monohydride phase and a newly discovered dihydride phase in chemisorption of H on Si(100)2 × 1
4. The surface structure of Si(100) surfaces using averaged leed
5. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)
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1. Absence of surface stress change during pentacene thin film growth on the Si(111)-(7 × 7) surface: a buried reconstruction interface;New Journal of Physics;2008-02-25
2. Initial surface reconstructions on solid-phase homoepitaxially grown amorphous silicon overlayers on Si(111)-7×7 surface;Surface Science;1999-11
3. Fabrication and Integration of Nanostructures on Si Surfaces;Accounts of Chemical Research;1999-02-04
4. Self-organization of nanostructures on Si wafers using surface structure control;Surface Science;1997-10
5. Room-temperature growth of submonolayers of silicon on Si(001) studied with scanning tunneling microscopy;Physical Review B;1997-02-15
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