Reduction of Spin Injection Efficiency by Interface Defect Spin Scattering inZnMnSe/AlGaAs−GaAsSpin-Polarized Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Reduction of Spin Injection Efficiency by Interface Defect Spin Scattering inZnMnSe/AlGaAs−GaAsSpin-Polarized Light-Emitting Diodes

Published:2002-09-26 Issue:16 Volume:89 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Stroud R. M.,Hanbicki A. T.,Park Y. D.,Kioseoglou G.,Petukhov A. G.,Jonker B. T.,Itskos G.,Petrou A.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.89.166602/fulltext

Reference30 articles.

1. Injection and detection of a spin-polarized current in a light-emitting diode

2. Robust electrical spin injection into a semiconductor heterostructure

3. Electrical spin injection across air-exposed epitaxially regrown semiconductor interfaces

4. Quantifying electrical spin injection: Component-resolved electroluminescence from spin-polarized light-emitting diodes

5. Spin-valve effects in nickel/silicon/nickel junctions

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