Evidence for a New Class of Defects in Highlyn-Doped Si: Donor-Pair-Vacancy-Interstitial Complexes-Reference-Cited by-同舟云学术

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Evidence for a New Class of Defects in Highlyn-Doped Si: Donor-Pair-Vacancy-Interstitial Complexes

Published:2003-09-19 Issue:12 Volume:91 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Voyles P. M.,Chadi D. J.,Citrin P. H.,Muller D. A.,Grazul J. L.,Northrup P. A.,Gossmann H.-J. L.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.91.125505/fulltext

Reference21 articles.

1. Metastable doping behavior in antimony‐implanted (100) silicon

2. The nature of electrically inactive antimony in silicon

3. Annealing of Heavily Arsenic-Doped Silicon: Electrical Deactivation and a New Defect Complex

4. Sequential Oxygen Atom Chemisorption on Surfaces of Small Iron Clusters

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