Evolution of the Fermi Surface with Carrier Concentration inBi2Sr2CaCu2O8+δ-Reference-Cited by-同舟云学术

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Evolution of the Fermi Surface with Carrier Concentration inBi2Sr2CaCu2O8+δ

Published:1997-03-31 Issue:13 Volume:78 Page:2628-2631
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Ding H.,Norman M. R.,Yokoya T.,Takeuchi T.,Randeria M.,Campuzano J. C.,Takahashi T.,Mochiku T.,Kadowaki K.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.78.2628/fulltext

Reference18 articles.

1. Fermi surfaces ofYBa2Cu3O6.9as seen by angle-resolved photoemission

2. High-resolution angle-resolved photoemission study of the Fermi surface and the normal-state electronic structure ofBi2Sr2CaCu2O8

3. Electronic Excitations inBi2Sr2CaCu2O8: Fermi Surface, Dispersion, and Absence of Bilayer Splitting

4. Fermi surface and electronic structure ofNd2−xCexCuO4−δ

5. Luttinger Fermi surface of metallic gap spectral weight inNd1.85Ce0.15CuO4−y

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