Pulsed-laser irradiated silicon studied by time-resolved x-ray absorption (90–300 eV)-Reference-Cited by-同舟云学术

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Pulsed-laser irradiated silicon studied by time-resolved x-ray absorption (90–300 eV)

Published:1986-02-10 Issue:6 Volume:56 Page:655-658
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Murakami Kouichi,Gerritsen Hans C.,van Brug Hedser,Bijkerk Fred,Saris Frans W.,van der Wiel Marnix J.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.56.655/fulltext

Reference12 articles.

1. Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation

2. Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing

3. Evidence for a Self-Propagating Melt in Amorphous Silicon upon Pulsed-Laser Irradiation

4. Time-Resolved Laser-Induced Phase Transformation in Aluminum

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