Hydrogen-Induced Surface Metallization ofβ−SiC(100)−(3×2)Revisited by Density Functional Theory Calculations
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.94.116103/fulltext
Reference17 articles.
1. Theoretical studies of silicon carbide surfaces
2. Atomic and electronic structure ofβ−SiC(001)−(3×2)
3. A metallic semiconductor surface
4. Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization
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2. Adsorbate-induced modifications of the electronic properties of semiconductors and oxide surfaces;Journal of Physics D: Applied Physics;2018-08-31
3. Comment on “Adsorption of hydrogen and hydrocarbon molecules on SiC(001)” by Pollmann et al. (Surf. Sci. Rep. 69 (2014) 55–104);Surface Science;2016-02
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