Bond length of Ge dimers at Si(001)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.72.1130/fulltext
Reference6 articles.
1. Direct measurement of the asymmetric dimer buckling of Ge on Si(001)
2. Ab initiocalculations of Si, As, S, Se, and Cl adsorption on Si(001) surfaces
3. Scattering-theoretical method for semiconductor surfaces: self-consistent formulation and application to Si(001)-(2×1)
4. The Ge(001) (2 × 1) reconstruction: asymmetric dimers and multilayer relaxation observed by grazing incidence X-ray diffraction
5. Anisotropy of the mean-square displacements at the Si(001)-(2 × 1) surface
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1. Study of atomic arrangements and charge distribution on Si(0 0 1) surfaces with the adsorption of one Ge atom by DFTB calculations;Applied Surface Science;2018-07
2. Theory of bond-length variations in relaxed, strained, and amorphous silicon-germanium alloys;Physical Review B;2002-11-13
3. A first principles study of sub-monolayer Ge on Si();Surface Science;2002-09
4. Electronic Structure of Semiconductor Surfaces;Electronic Structure;2000
5. Pseudopotential studies of co-adsorption of group-V elements and Ge on Si(001) surfaces;Surface Science;1999-12
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