Direct Observation of Intermixing at Ge/Si(001) Interfaces by High-Resolution Rutherford Backscattering Spectroscopy
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.83.1802/fulltext
Reference19 articles.
1. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)
2. Local dimer exchange in surfactant-mediated epitaxial growth
3. Mechanical stresses in (sub)monolayer epitaxial films
4. Surface stress and interface formation
5. Influence of surfactants in Ge and Si epitaxy on Si(001)
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