Isotope-Disorder-Induced Line Broadening of Phonons in the Raman Spectra of SiC
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.86.826/fulltext
Reference18 articles.
1. Dependence of phonon linewidths in semiconductors on temperature and isotopic composition
2. Lattice dynamics and Raman spectra of isotopically mixed diamond
3. Comparison of the phonon spectra ofGe70and natural Ge crystals: Effects of isotopic disorder
4. Anharmonic decay time, isotopic scattering time, and inhomogeneous line broadening of optical phonons inGe70,Ge76, and natural Ge crystals
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3. Isotopic Disorder: The Prevailing Mechanism in Limiting the Phonon Lifetime in Hexagonal BN;Physical Review Letters;2020-04-22
4. Modifications in structural, optical and electrical properties of epitaxial graphene on SiC due to 100 MeV silver ion irradiation;Materials Science in Semiconductor Processing;2018-02
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