Hydrogen-induced metastable changes in the electrical conductivity of polycrystalline silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.72.3393/fulltext
Reference20 articles.
1. Hydrogenation of transistors fabricated in polycrystalline-silicon films
2. Deuterium passivation of grain‐boundary dangling bonds in silicon thin films
3. Density of gap states of silicon grain boundaries determined by optical absorption
4. Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films
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