Evidence for an intrinsic intergap surface state on GaSb(110) by high-resolution angle-resolved photoemission
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.58.610/fulltext
Reference22 articles.
1. Influence of volume dope on Fermi level position at gallium arsenide surfaces
2. Electronic properties of clean cleaved {110} GaAs surfaces
3. Temperature- and illumination-dependence of the work function of gallium arsenide
4. Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAs
5. Surface state band on GaAs (110) face
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