Exciton Binding Energy in GaAs V-Shaped Quantum Wires-Reference-Cited by-同舟云学术

Exciton Binding Energy in GaAs V-Shaped Quantum Wires

Published:1994-11-21 Issue:21 Volume:73 Page:2899-2902
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Rinaldi R.,Cingolani R.,Lepore M.,Ferrara M.,Catalano I. M.,Rossi F.,Rota L.,Molinari E.,Lugli P.,Marti U.,Martin D.,Morier-Gemoud F.,Ruterana P.,Reinhart F. K.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.73.2899/fulltext

Reference16 articles.

1. Electronic states and optical transitions in low-dimensional semiconductors

2. Fractional‐dimensional calculation of exciton binding energies in semiconductor quantum wells and quantum‐well wires

3. X‐ray diffraction reciprocal space mapping of a GaAs surface grating

4. Stimulated emission in semiconductor quantum wire heterostructures

5. Luminescence characteristics of quantum wires grown by organometallic chemical vapor deposition on nonplanar substrates

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