Microscopic Evidence for the Modification of the Electronic Structure at Grain Boundaries ofCu(In1−x,Gax)Se2Films
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.108.076603/fulltext
Reference15 articles.
1. New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%
2. Grain boundaries in Cu(In, Ga)(Se, S)2 thin-film solar cells
3. Kelvin probe force microscopy for the nano scale characterization of chalcopyrite solar cell materials and devices
4. Texture and electronic activity of grain boundaries in Cu(In,Ga)Se2 thin films
5. Current routes in polycrystalline CuInSe2 and Cu(In,Ga)Se2 films
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2. Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers;ACS Applied Materials & Interfaces;2022-07-18
3. Grain Boundaries in Cu(In, Ga)Se 2 : A Review of Composition–Electronic Property Relationships by Atom Probe Tomography and Correlative Microscopy;Advanced Functional Materials;2021-07-16
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