Metal-Insulator Transition in Graphene on Boron Nitride
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.113.096801/fulltext
Reference48 articles.
1. Boron nitride substrates for high-quality graphene electronics
2. Van der Waals heterostructures
3. Graphene on hexagonal boron nitride
4. Limits on Charge Carrier Mobility in Suspended Graphene due to Flexural Phonons
5. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
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