Fluorine-Based Mechanisms for Atomic-Layer-Epitaxial Growth on Diamond (110)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.74.4875/fulltext
Reference19 articles.
1. Diamond and β-SiC heteroepitaxial interfaces: A theoretical and experimental study
2. Textured growth of diamond on silicon viain situcarburization and bias‐enhanced nucleation
3. Oriented nucleation and growth of diamond films on β‐SiC and Si
4. Thin films and devices of diamond, silicon carbide and gallium nitride
5. Atomic layer epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Self-limiting diamond growth from alternating CFx and H fluxes;Diamond and Related Materials;1998-08
2. Growth of diamond films from a continuous or interrupted CF4 supply;Diamond and Related Materials;1997-03
3. Chemical vapour deposition of diamond at low substrate temperatures using fluorinated precursors;Thin Solid Films;1996-12
4. Diamond deposition from fluorinated precursors using microwave‐plasma chemical vapor deposition;Applied Physics Letters;1995-10-16
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