Well-Known "Surface State" on Si(111)2×1 Identified as a Bulk Contribution-Reference-Cited by-同舟云学术

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Well-Known "Surface State" on Si(111)2×1 Identified as a Bulk Contribution

Published:1984-06-18 Issue:25 Volume:52 Page:2265-2268
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Uhrberg R. I. G.,Hansson G. V.,Karlsson U. O.,Nicholls J. M.,Persson P. E. S.,Flodström S. A.,Engelhardt R.,Koch E. -E.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.52.2265/fulltext

Reference19 articles.

1. Angle-resolved measurements of the photoemission of electrons in the study of solids

2. Experimental Evidence for One Highly Dispersive Dangling-Bond Band on Si(111) 2 × 1

3. Newπ-Bonded Chain Model for Si(111)-(2×1) Surface

4. Reconstruction Mechanism and Surface-State Dispersion for Si(111)-(2×1)

5. Measurement of the Angle of Dangling-Bond Photoemission from Cleaved Silicon

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1. Nearly Massless Electrons in the Silicon Interface with a Metal Film;Physical Review Letters;2010-06-16

2. Semiconductors, Elemental-Electronic Properties;digital Encyclopedia of Applied Physics;2003-04-15

3. Electron and positron energy distributions in silicon;Materials Chemistry and Physics;1997-03

4. Intrinsic valence and conduction bands of Si(111)-1×1;Physical Review B;1996-12-15

5. Electronic structure of semiconductor surfaces and interfaces;Surface Science;1994-01

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