Direct measurement of the hot carrier cooling rate ina-Si:H using femtosecond 4 eV pulses
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.69.3682/fulltext
Reference26 articles.
1. Femtosecond absorption saturation studies of hot carriers in GaAs and AlGaAs
2. Subpicosecond carrier trapping in high-defect-density amorphous Si and GaAs
3. Ultrafast recombination and trapping in amorphous silicon
4. Extended state mobility in a-Si:H measured by femtosecond spectroscopy
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