Ultrafast Atomic Diffusion Inducing a Reversible(23×23)R30°↔(3×3)R30°Transition onSn/Si(111)∶B-Reference-Cited by-同舟云学术

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Ultrafast Atomic Diffusion Inducing a Reversible(23×23)R30°↔(3×3)R30°Transition onSn/Si(111)∶B

Published:2015-05-13 Issue:19 Volume:114 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Srour W.,Trabada Daniel G.,Martínez J. I.,Flores F.,Ortega J.,Abuín M.,Fagot-Revurat Y.,Kierren B.,Taleb-Ibrahimi A.,Malterre D.,Tejeda A.

Funder

Agence Nationale de la Recherche

Spanish MICIIN

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.114.196101/fulltext

Reference37 articles.

1. Ordered structures and phase transitions in adsorbed layers

2. Electron correlation and many-body effects at interfaces on semiconducting substrates

3. Colloquium: Electronic instabilities in self-assembled atom wires

4. Superconductivity at the Two-Dimensional Limit

5. Superconductivity in one-atomic-layer metal films grown on Si(111)

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1. Sn-induced 1D nanostructure formed on Si(5 5 12)-2  ×  1: Faceting followed by preferential adsorption;Surface Science;2019-10

2. DFT molecular dynamics and free energy analysis of a charge density wave surface system;Applied Surface Science;2019-06

3. Atomic and electronic structure of doped Si(111)(23×23)R30∘ -Sn interfaces;Physical Review B;2018-05-01

4. Zero-bias anomaly in nanoscale hole-doped Mott insulators on a triangular silicon surface;Physical Review B;2018-02-05

5. Hidden phase in a two-dimensional Sn layer stabilized by modulation hole doping;Nature Communications;2017-03-07

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