Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus-Reference-Cited by-同舟云学术

Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus

Published:2021-10-26 Issue:18 Volume:127 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Huang Shenyang,Lu Yang^ORCID,Wang Fanjie,Lei Yuchen,Song Chaoyu^ORCID,Zhang Jiasheng,Xing Qiaoxia,Wang Chong,Xie Yuangang,Mu Lei,Zhang Guowei,Yan Hao^ORCID,Chen Bin,Yan Hugen

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Shanghai

Chinese Academy of Sciences

China Postdoctoral Science Foundation

Natural Science Basic Research Program of Shaanxi Province

Research Fund for Young Star of Science and Technology in Shaanxi Province

Northwestern Polytechnical University

Office of Science

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.127.186401/fulltext

Reference43 articles.

1. Black phosphorus field-effect transistors

2. The renaissance of black phosphorus

3. Black Phosphorus: Narrow Gap, Wide Applications

4. Direct observation of the layer-dependent electronic structure in phosphorene

5. Infrared fingerprints of few-layer black phosphorus

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