Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.80.361/fulltext
Reference17 articles.
1. Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system
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3. The electronic structure of GaSe
4. Electronic properties of the III–VI layer compounds GaS, GaSe and InSe. I: Band structure
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