Origin of the Large AnisotropicgFactor of Holes in Bismuth-Reference-Cited by-同舟云学术

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Origin of the Large AnisotropicgFactor of Holes in Bismuth

Published:2015-11-16 Issue:21 Volume:115 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Fuseya Yuki,Zhu Zengwei,Fauqué Benoît,Kang Woun,Lenoir Bertrand,Behnia Kamran

Funder

Japan Society for the Promotion of Science

Agence Nationale de la Recherche

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

SUPERFIELD

QUANTUM LIMIT

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.115.216401/fulltext

Reference37 articles.

1. Quantum Theory of Cyclotron Resonance in Semiconductors: General Theory

2. Theory of Optical Magneto-Absorption Effects in Semiconductors

3. Theg-factor and de haas-van alphen effect of electrons in bismuth

4. g Factors and Spin-Lattice Relaxation of Conduction Electrons

5. Matrix elements and selection rules for the two-band model of bismuth

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