Strongly Metallic Electron and Hole 2D Transport in an Ambipolar Si-Vacuum Field Effect Transistor-Reference-Cited by-同舟云学术

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Strongly Metallic Electron and Hole 2D Transport in an Ambipolar Si-Vacuum Field Effect Transistor

Published:2015-07-13 Issue:3 Volume:115 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Hu Binhui,Yazdanpanah M. M.,Kane B. E.,Hwang E. H.,Das Sarma S.

Funder

Center for Nanoscale Science and Technology

LPS-CMTC

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.115.036801/fulltext

Reference35 articles.

1. Possible metal-insulator transition atB=0 in two dimensions

2. Relative importance of the electron interaction strength and disorder in the two-dimensional metallic state

3. The Metalliclike Conductivity of a Two-Dimensional Hole System

4. Transport and Percolation in a Low-Density High-Mobility Two-Dimensional Hole System

5. Metallic Behavior in Dilute Two-Dimensional Hole Systems

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2. Density-tuned effective metal-insulator transitions in two-dimensional semiconductor layers: Anderson localization or Wigner crystallization;Physical Review B;2023-05-25

3. A non-invasive gating method for probing 2D electron systems on pristine, intrinsic H-Si(111) surfaces;Applied Physics Letters;2020-10-12

4. Nanoscale vacuum channel transistor with in-plane collection structure;Nanotechnology;2019-11-12

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