Distinct Electronic Structure for the Extreme Magnetoresistance in YSb-Reference-Cited by-同舟云学术

Distinct Electronic Structure for the Extreme Magnetoresistance in YSb

Published:2016-12-23 Issue:26 Volume:117 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

He Junfeng,Zhang Chaofan,Ghimire Nirmal J.,Liang Tian,Jia Chunjing,Jiang Juan,Tang Shujie,Chen Sudi,He Yu,Mo S.-K.,Hwang C. C.,Hashimoto M.,Lu D. H.,Moritz B.,Devereaux T. P.,Chen Y. L.,Mitchell J. F.,Shen Z.-X.

Funder

U.S. Department of Energy

National Research Foundation of Korea

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.117.267201/fulltext

Reference33 articles.

1. Large, non-saturating magnetoresistance in WTe2

2. Electronic Structure Basis for the Extraordinary Magnetoresistance inWTe2

3. Anisotropic giant magnetoresistance in NbSb2

4. Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd3As2

5. Electron-hole compensation effect between topologically trivial electrons and nontrivial holes in NbAs

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