Decoupling Edge Versus Bulk Conductance in the Trivial Regime of anInAs/GaSbDouble Quantum Well Using Corbino Ring Geometry-Reference-Cited by-同舟云学术

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Decoupling Edge Versus Bulk Conductance in the Trivial Regime of anInAs/GaSbDouble Quantum Well Using Corbino Ring Geometry

Published:2016-08-12 Issue:7 Volume:117 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Nguyen Binh-Minh,Kiselev Andrey A.,Noah Ramsey,Yi Wei,Qu Fanming,Beukman Arjan J. A.,de Vries Folkert K.,van Veen Jasper,Nadj-Perge Stevan,Kouwenhoven Leo P.,Kjaergaard Morten,Suominen Henri J.,Nichele Fabrizio,Marcus Charles M.,Manfra Michael J.,Sokolich Marko

Funder

Stichting voor Fundamenteel Onderzoek der Materie

Danmarks Grundforskningsfond

European Commission

Microsoft Research

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.117.077701/fulltext

Reference30 articles.

1. Band‐structure tailoring by electric field in a weakly coupled electron‐hole system

2. Band structure of coupled InAs/GaSb quantum wells

3. Evidence of a Hybridization Gap in ``Semimetallic'' InAs/GaSb Systems

4. Tunable electron-hole gases in gated InAs/GaSb/AlSb systems

5. Resistance resonance induced by electron-hole hybridization in a strongly coupled InAs/GaSb/AlSb heterostructure

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4. Large inverted band gap in strained three-layer InAs/GaInSb quantum wells;Physical Review Research;2022-12-05

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