Anisotropy in the Positron 2D Angular Correlation of Annihilation Radiation for Singly Negative Divacancies in Si-Reference-Cited by-同舟云学术

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Anisotropy in the Positron 2D Angular Correlation of Annihilation Radiation for Singly Negative Divacancies in Si

Published:1997-03-17 Issue:11 Volume:78 Page:2236-2239
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Tang Z.,Hasegawa M.,Chiba T.,Saito M.,Kawasuso A.,Li Z. Q.,Fu R. T.,Akahane T.,Kawazoe Y.,Yamaguchi S.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.78.2236/fulltext

Reference22 articles.

1. Characterization of defects in Si and SiO2−Si using positrons

2. Defects in semiconductors observed by positron annihilation

3. Positron-annihilation studies of neutral and negatively charged As vacancies in GaAs

4. Positron states at point defects in GaAs measured by 2D-ACAR

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1. Two-component density functional theory within the projector augmented-wave approach: Accurate and self-consistent computations of positron lifetimes and momentum distributions;Physical Review B;2015-09-08

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3. Positron annihilation study for enhanced nitrogen-vacancy center formation in diamond by electron irradiation at 77 K;Applied Physics Letters;2014-04-28

4. Defect identification in semiconductors with positron annihilation: Experiment and theory;Reviews of Modern Physics;2013-11-14

5. Chemical analysis using coincidence Doppler broadening and supporting first-principles theory: Applications to vacancy defects in compound semiconductors;Physica B: Condensed Matter;2012-07

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