Origin of the Magnetoresistance in Oxide Tunnel Junctions Determined through Electric Polarization Control of the Interface-Reference-Cited by-同舟云学术

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Origin of the Magnetoresistance in Oxide Tunnel Junctions Determined through Electric Polarization Control of the Interface

Published:2015-11-11 Issue:4 Volume:5 Page:
ISSN:2160-3308
Container-title:Physical Review X
language:en
Short-container-title:Phys. Rev. X

Author:

Inoue Hisashi,Swartz Adrian G.,Harmon Nicholas J.,Tachikawa Takashi,Hikita Yasuyuki,Flatté Michael E.,Hwang Harold Y.

Funder

U.S. Department of Energy

Microelectronics Advanced Research Corporation

Defense Advanced Research Projects Agency

C-SPIN

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevX.5.041023/fulltext

Reference37 articles.

1. Electrical creation of spin polarization in silicon at room temperature

2. Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor

3. Gate-Controlled Spin Injection atLaAlO3/SrTiO3Interfaces

4. Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

5. Silicon spintronics with ferromagnetic tunnel devices

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4. Concomitant appearance of conductivity and superconductivity in (111) LaAlO3/SrTiO3 interface with metal capping;Physical Review Materials;2022-04-11

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