Time-resolved far-infrared magnetospectroscopy of hydrogenlike impurities in III-V semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.2002/fulltext
Reference37 articles.
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1. Preliminary results on short pulse/high power free electron laser spectroscopy in n-GaAs;Infrared Physics & Technology;1995-01
2. The dynamics of shallow donor ionization in n-GaAs studied with subnanosecond FIR-induced photoconductivity;Semiconductor Science and Technology;1994-01-01
3. Generation of subnanosecond high-power far-infrared pulses by using a passive resonator pumped by a free-electron laser;Journal of the Optical Society of America B;1992-10-01
4. Shallow impurity impact ionization transients in n-type InP and GaAs;Semiconductor Science and Technology;1992-02-01
5. Generation of very short far‐infrared pulses by cavity dumping a molecular gas laser;Journal of Applied Physics;1990-10
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