Genuine and faux single G centers in carbon-implanted silicon
Author:
Affiliation:
1. Laboratoire Charles Coulomb
2. Université de Montpellier
3. University Leipzig
4. Aix-Marseille Université
5. IM2NP
6. Université Grenoble Alpes
7. CEA, LETI
8. Solnil
9. CEA, Grenoble
10. Institut Universitaire de France
Funder
Agence Nationale de la Recherche
European Research Council
Horizon 2020
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.110.L020102/fulltext
Reference26 articles.
1. Single artificial atoms in silicon emitting at telecom wavelengths
2. Engineering telecom single-photon emitters in silicon for scalable quantum photonics
3. Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon
4. Detection of Single W-Centers in Silicon
5. Optical observation of single spins in silicon
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