First-principles investigation of the alloy scattering potential in dilute Si1−xCx
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.85.165209/fulltext
Reference33 articles.
1. Growth and properties of strained Si1-x-yGexCylayers
2. Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe
3. Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion
4. Charge transport in strained Si1−yCy and Si1−x−yGexCy alloys on Si(001)
5. Pseudomorphic Si1−yCy and Si1−x−yGexCy alloy layers on Si
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