Angular dependence of the electronic energy loss of 800-keV He ionsalong the Si〈100〉 direction
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.4332/fulltext
Reference45 articles.
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3. Location of deuterium on the silicon (100) monohydride surface determined by transmission-ion channeling
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