Pressure dependence of phonons and excitons in InSe films prepared by metal-organic chemical vapor deposition
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.165339/fulltext
Reference7 articles.
1. Photovoltaic efficiency of InSe solar cells
2. Properties of phase-pure InSe films prepared by metalorganic chemical vapor deposition with a single-source precursor
3. Refinement of the 3R γ-indium monoselenide structure type
4. Resonant Raman scattering in quasi-two-dimensional InSe near theM0andM1critical points
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