Basic circuit element for the implementation of base-3 and base-4 algorithms realized by an asymmetric MgO-based double-barrier magnetic tunnel junction-Reference-Cited by-同舟云学术

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Basic circuit element for the implementation of base-3 and base-4 algorithms realized by an asymmetric MgO-based double-barrier magnetic tunnel junction

Published:2019-05-15 Issue:17 Volume:99 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Jia Xing-tao,Wu Ping-Ping,Zhang Li-Wei,Tang Hui-Min

Funder

National Natural Science Foundation of China

Henan Polytechnic University

Natural Science Foundation of Guangxi Province

Guangxi Normal University

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.99.174413/fulltext

Reference61 articles.

1. Memristive switching of MgO based magnetic tunnel junctions

2. Magnetic Tunnel Junctions with Ferroelectric Barriers: Prediction of Four Resistance States from First Principles

3. Tunnel junctions with multiferroic barriers

4. The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse-Neuron System

5. Integration of nanoscale memristor synapses in neuromorphic computing architectures

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1. Tunable magneto-Seebeck effect in Co2FeSi/MgO/Co2FeSi heterostructure via optimized interfacial engineering;Science China Physics, Mechanics & Astronomy;2024-02-04

2. MXene-Based Sc₂CHO/Sc₂NHO/Sc₂CHO Magnetic Tunnel Junctions for Multi-Value Logic Computing Devices: A First Principles Study;ACS Applied Nano Materials;2023-03-23

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