Geometric and electronic structure of the Cs-doped Bi2Se3 (0001) surface-Reference-Cited by-同舟云学术

Geometric and electronic structure of the Cs-doped Bi2Se3 (0001) surface

Published:2017-05-22 Issue:20 Volume:95 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Otrokov M. M.,Ernst A.,Mohseni K.,Fulara H.,Roy S.,Castro G. R.,Rubio-Zuazo J.,Ryabishchenkova A. G.,Kokh K. A.,Tereshchenko O. E.,Aliev Z. S.,Babanly M. B.,Chulkov E. V.,Meyerheim H. L.,Parkin S. S. P.

Funder

Deutsche Forschungsgemeinschaft

Euskal Herriko Unibertsitatea

Ministerio de Ciencia e Innovación

Tomsk State University

Saint Petersburg State University

Russian Science Foundation

European Synchrotron Radiation Facility

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.205429/fulltext

Reference60 articles.

1. Topological field theory of time-reversal invariant insulators

2. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

3. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

4. Colloquium: Topological insulators

5. Topological insulators and superconductors

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