Enhanced ferromagnetic transition temperature induced by a microscopic structural rearrangement in the diluted magnetic semiconductor Ge1−xMnxTe-Reference-Cited by-同舟云学术

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Enhanced ferromagnetic transition temperature induced by a microscopic structural rearrangement in the diluted magnetic semiconductor Ge1−xMnxTe

Published:2017-06-15 Issue:22 Volume:95 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kriener M.,Nakajima T.,Kaneko Y.,Kikkawa A.,Hashizume D.,Kato K.,Takata M.,Arima T.,Tokura Y.,Taguchi Y.

Funder

Japan Society for the Promotion of Science

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.224418/fulltext

Reference54 articles.

1. Electronic structure of intrinsic defects in crystalline germanium telluride

2. RELATIVISTIC BAND STRUCTURE OF GeTe, SnTe, PbTe, PbSe, AND PbS

3. Density functional study of the effect of pressure on the ferroelectricGeTe

4. Superconductivity in Many-Valley Semiconductors and in Semimetals

5. Superconductivity in Germanium Telluride

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. XGT (X=Fe, Mn, Cr; G=Ge; T=Te) : A family of two-dimensional ternary intrinsic magnetic materials;Physical Review Materials;2022-04-20

2. Ferroelectric Switching of Pure Spin Polarization in Two-Dimensional Electron Gas;Nano Letters;2020-08-12

3. Evolution of Electronic States and Emergence of Superconductivity in the Polar Semiconductor GeTe by Doping Valence-Skipping Indium;Physical Review Letters;2020-01-31

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