Resonant tunneling and intrinsic bistability in twisted graphene structures
Author:
Funder
National Science Foundation
U.S. Department of Energy
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.94.085412/fulltext
Reference23 articles.
1. Memory leads the way to better computing
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3. Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
4. Graphene/Metal Contacts: Bistable States and Novel Memory Devices
5. Ambipolar bistable switching effect of graphene
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1. Spin-dependent resonant tunneling and magnetoresistance in Ni/graphene/h-BN/graphene/Ni van der Waals heterostructures;Journal of Magnetism and Magnetic Materials;2019-04
2. Resonance effects in correlated multilayer heterostructures;Physical Review B;2016-12-27
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