Atomic structure of theSi(112)7×1−Insurface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.9928/fulltext
Reference36 articles.
1. Surface Reactions of Silicon (111) with Aluminum and Indium
2. Surface reconstructions of In on Si(111)
3. A comparative study of the thermal stability of the (103) surface of group-III-metal/group-IV-semiconductor systems
4. Structural model for the Si(111)-4×1-In reconstruction
5. STM tip-induced diffusion of In atoms on the Si(111)3×3-In surface
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1. Sn-induced 1D nanostructure formed on Si(5 5 12)-2 × 1: Faceting followed by preferential adsorption;Surface Science;2019-10
2. Ga and In adsorption on Si(112): Adsorption sites and superstructure;Physical Review B;2017-03-31
3. Growth kinetics of indium metal atoms on Si(1 1 2) surface;Materials Research Bulletin;2015-12
4. Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy;Journal of Applied Physics;2012-11
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