Theory of Raman spectra of heavily doped semiconductor multiple quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.11517/fulltext
Reference20 articles.
1. Intersubband spectroscopy of two dimensional electron gases: Coulomb interactions
2. Raman Scattering by Coupled-Layer Plasmons and In-Plane Two-Dimensional Single-Particle Excitations in Multi-Quantum-Well Structures
3. Electronic Raman scattering inp-doped GaAs/Ga1−xAlxAs quantum-well structures: Scattering mechanisms and many-particle interactions
4. Electronic properties of multiple Si δ doping in GaAs
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1. Theoretical study of phosphorousδ-doped silicon for quantum computing;Physical Review B;2005-01-12
2. Plasmons in asymmetric double quantum well structures;The European Physical Journal B - Condensed Matter;2002-12-01
3. Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of anInxGa1−xN/GaNdouble heterostructure;Physical Review B;2001-04-05
4. Raman studies of delta-doped semiconductors and quantum wells;Journal of Applied Physics;1999-02
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