Spin tunneling in multilayer spintronic devices-Reference-Cited by-同舟云学术

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Spin tunneling in multilayer spintronic devices

Published:2008-02-20 Issue:8 Volume:77 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Tan S. G.,Jalil M. B. A.,Kumar S. Bala,Liang G.-C.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.085424/fulltext

Reference41 articles.

1. ‘‘Field-dependent interface resistance’’ of Ag/Co multilayers

2. Effect of capping layer on the spin accumulation and magnetoresistance of a current-perpendicular-to-plane spin valve

3. Perpendicular giant magnetoresistance of microstructured Fe/Cr magnetic multilayers from 4.2 to 300 K

4. Field dependence of high-frequency magnetic noise in tunneling magnetoresistive heads

5. Perpendicular giant magnetoresistances of Ag/Co multilayers

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3. The metal atomic substitution induced half-metallic properties, metallic properties and semiconducting properties in X–N₄ nanoribbons;Physical Chemistry Chemical Physics;2023

4. Tailored modifications of the electronic properties of g-C₃N₄/C₂N-h2D nanoribbons by first-principles calculations;Physical Chemistry Chemical Physics;2023

5. Tunable electronic structure and spin splitting in single and multiple Fe-adsorbed g-C2N with different layers: A first-principles study;Journal of Physics and Chemistry of Solids;2018-04

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