Calculation of bond lengths in anIn1−xGaxAs1−yPyquaternary-alloy semiconductor
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.1506/fulltext
Reference17 articles.
1. Structural Origin of Optical Bowing in Semiconductor Alloys
2. Effects of Chemical and Structural Disorder in Semiconducting Pseudobinary Alloys
3. Atomic-Scale Structure of Random Solid Solutions: Extended X-Ray-Absorption Fine-Structure Study ofGa1−xInxAs
4. Extended x-ray-absorption fine-structure study ofGa1−xInxAsrandom solid solutions
5. An Extended X-Ray-Absorption Fine-Structure Study of Bond Lengths in GaAs1-xPx
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1. Influence of disorder effects on Cd1-xZnxTe optical properties;PHYS STATUS SOLIDI B;2000
2. Influence of Disorder Effects on Cd1-xZnxTe Optical Properties;physica status solidi (b);2000-07
3. Bondlength distortion of atomic substitutions in semiconductors;Pramana;1999-01
4. Optical-phonon behavior inGa1−xInxAs:The role of microscopic strains and ionic plasmon coupling;Physical Review B;1998-10-15
5. Theoretical analysis of disorder effects on electronic and optical properties in InGaAsP quaternary alloy;Journal of Applied Physics;1997-11-15
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